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8550S Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. 8550S
Description  LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

8550S Datasheet(HTML) 2 Page - Unisonic Technologies

  8550S Datasheet HTML 1Page - Unisonic Technologies 8550S Datasheet HTML 2Page - Unisonic Technologies 8550S Datasheet HTML 3Page - Unisonic Technologies 8550S Datasheet HTML 4Page - Unisonic Technologies  
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8550S
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R206-002,D
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATING
UNITS
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
SOT-23
350
mW
Collector Dissipation(Ta=25
)
TO-92
PC
1
W
Collector Current
IC
-700
mA
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25 ,
℃ unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=-100
µA,I
E=0
-30
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=-1mA,IB=0
-20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA,Ic=0
-5
V
Collector Cut-off Current
ICBO
VCB=-30V,IE=0
-1
uA
Emitter Cut-off Current
IEBO
VEB=-5V,Ic=0
-100
nA
hFE1
VCE=-1V,Ic=-1mA
100
hFE2
VCE=-1V,Ic=-150 mA
120
400
DC Current Gain
hFE3
VCE=-1V,Ic=-500mA
40
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=-500mA,IB=-50mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
Ic=-500mA,IB=-50mA
-1.2
V
Base-Emitter Saturation Voltage
VBE
VCE=-1V,Ic=-10mA
-1.0
V
Current Gain Bandwidth Product
fT
VCE=-10V,Ic=-50mA
100
MHz
Output Capacitance
Cob
VCB=-10V,IE=0, f=1MHz
9.0
pF
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400


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