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2N5088 Datasheet(PDF) 1 Page - Unisonic Technologies

Part No. 2N5088
Description  NPN GENERAL PURPOSE AMPLIFIER
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N5088 Datasheet(HTML) 1 Page - Unisonic Technologies

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UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-040,A
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1
µA to 50mA.
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
RATING
SYMBOL
2N5088
2N5089
UNIT
Collector-Emitter voltage
VCEO
30
25
V
Collector-Base voltage
VCBO
35
30
V
Emitter-base voltage
VEBO
4.5
V
Collector current-continuous
Ic
100
mA
Operating and Storage
Junction Temperature Range
Tj, Tstg
-55 ~ +150
°C
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
MAX
UNIT
Total Device Dissipation
Derate above 25
°C
PD
625
5
mW
mW/
°C
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Thermal Resistance, Junction to
Ambient
RθJA
200
°C/W


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