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MMBT5088 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. MMBT5088
Description  NPN GENERAL PURPOSE AMPLIFIER
Download  6 Pages
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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MMBT5088 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-033,A
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(note)
MMBT5088
MMBT5089
V(BR)CEO IC=1.0mA, IB=0
30
25
V
V
Collector-Base Breakdown Voltage
MMBT5088
MMBT5089
V(BR)CBO IC=100µA, IE=0
35
30
V
V
Collector Cut-Off Current
MMBT5088
MMBT5089
ICBO
VCB=20V, IE=0
VCB=15V, IE=0
50
50
nA
nA
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
VEB=4.5V, IC=0
50
100
nA
nA
ON CHARACTERISTICS
DC Current Gain
hFE
VCE=5.0V, IC=100µA
MMBT5088
MMBT5089
VCE=5.0V, IC=1.0mA
MMBT5088
MMBT5089
VCE=5.0V, IC=10mA (note)
MMBT5088
MMBT5089
300
400
350
450
300
400
900
1200
Collector-Emitter Saturation Voltage
VCE(sat) IC=10mA, IB=1.0mA
0.5
V
Base-Emitter On Voltage
VBE(on)
IC=10mA, VCE=5.0V
0.8
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
VCE=5.0mA, Ic=500µA, f=20MHz
50
MHz
Collector-Base Capacitance
Ccb
VCB=5.0V, IE=0, f=100kHz
4
pF
Emitter-Base Capacitance
Ceb
VEB=0.5V, Ic=0, f=100kHz
10
pF
Small-Signal Current Gain
MMBT5088
MMBT5089
hFE
VCE=5.0V, Ic=1.0mA, f=1.0kHz
350
450
1400
1800
Noise Figure
MMBT5088
MMBT5089
NF
VCE=5.0V, Ic=100µA, Rs=10kΩ,
f=10kHz to 15.7kHz
3.0
2.0
dB
dB
Note: Pulse Test: Pulse Width
≤300µs, Duty Cycle≤2.0%.


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