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HE8551 Datasheet(PDF) 1 Page - Unisonic Technologies |
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HE8551 Datasheet(HTML) 1 Page - Unisonic Technologies |
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UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-047,A LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8051 TO-92 1 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Dissipation(Ta=25℃ ) Pc 1 W Collector Current Ic -1.5 A Junction Temperature Tj 150 °C Storage Temperature TSTG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100 µA,IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO Ic=-2mA,IB=0 -25 V Emitter-Base Breakdown Voltage BVEBO IE=-100 µA,Ic=0 -6 V Collector Cut-Off Current ICBO VCB=-35V,IE=0 -100 nA Emitter Cut-Off Current IEBO VEB=-6V,Ic=0 -100 nA DC Current Gain(note) hFE1 hFE2 hFE3 VCE=-1V,Ic=-5mA VCE=-1V,Ic=-100mA VCE=-1V,Ic=-800mA 45 85 40 170 160 80 500 Collector-Emitter Saturation Voltage VCE(sat) Ic=-800mA,IB=-80mA -0.28 -0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=-800mA,IB=-80mA -0.98 -1.2 V Base-Emitter Voltage VBE VCE=-1V,Ic=-10mA -0.66 -1.0 V Current Gain Bandwidth Product fT VCE=-10V,Ic=-50mA 100 190 MHz Output Capacitance Cob VCB=-10V,IE=0 f=1MHz 9.0 pF |
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