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HE8551 Datasheet(PDF) 1 Page - Unisonic Technologies

Part No. HE8551
Description  LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

HE8551 Datasheet(HTML) 1 Page - Unisonic Technologies

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UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-047,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8551 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull 2W
audio amplifier for portable radio and general purpose
applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8051
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-6
V
Collector Dissipation(Ta=25℃
)
Pc
1
W
Collector Current
Ic
-1.5
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=-100
µA,IE=0
-40
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=-2mA,IB=0
-25
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100
µA,Ic=0
-6
V
Collector Cut-Off Current
ICBO
VCB=-35V,IE=0
-100
nA
Emitter Cut-Off Current
IEBO
VEB=-6V,Ic=0
-100
nA
DC Current Gain(note)
hFE1
hFE2
hFE3
VCE=-1V,Ic=-5mA
VCE=-1V,Ic=-100mA
VCE=-1V,Ic=-800mA
45
85
40
170
160
80
500
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=-800mA,IB=-80mA
-0.28
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
Ic=-800mA,IB=-80mA
-0.98
-1.2
V
Base-Emitter Voltage
VBE
VCE=-1V,Ic=-10mA
-0.66
-1.0
V
Current Gain Bandwidth Product
fT
VCE=-10V,Ic=-50mA
100
190
MHz
Output Capacitance
Cob
VCB=-10V,IE=0
f=1MHz
9.0
pF


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