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HE8550 Datasheet(PDF) 3 Page - Unisonic Technologies |
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HE8550 Datasheet(HTML) 3 Page - Unisonic Technologies |
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HE8550 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-031,B TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage ( V) -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -0.1 -0.2 -0.3 -0.4 -0.5 IB=-0.5mA IB=-1.0mA IB=-1.5mA IB=-2.0mA IB=-2.5mA IB=-3.0mA DC Current Gain Collector Current, IC (mA) VCE=-1V -10 -1 -10 0 -10 1 -10 2 -10 3 10 0 10 1 10 2 10 3 Base-Emitter on Voltage Base-Emitter Voltage (V) 0 -0.2 -0.4 -0.6 -0.8 -1.0 VCE=-1V Collector Current, IC (mA) Saturation Voltage VCE(SAT) VBE(SAT) IC=10*IB -10 0 -10 1 -10 2 -10 3 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 1 -10 2 -10 3 -10 4 Current Gain-Bandwidth Product Collector Output Capacitance Collector Current, IC (mA) VCE=-10V Collector-Base Voltage (V) f=1MHz IE=0 -10 0 -10 1 -10 2 -10 3 10 0 10 1 10 2 10 3 -10 0 -10 1 -10 2 -10 3 10 0 10 1 10 2 10 3 |
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