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HE8051 Datasheet(PDF) 1 Page - Unisonic Technologies |
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HE8051 Datasheet(HTML) 1 Page - Unisonic Technologies |
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UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-046,A LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *complimentary to UTC HE8551 TO-92 1 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25 °C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 °C Storage Temperature TSTG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100 µA,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO Ic=2mA,IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 µA,Ic=0 6 V Collector Cut-Off Current ICBO VCB=35V,IE=0 100 nA Emitter Cut-Off Current IEBO VEB=6V,Ic=0 100 nA DC Current Gain hFE1 hFE2 hFE3 VCE=1V,Ic=5mA VCE=1V,Ic=100mA VCE=1V,Ic=800mA 45 85 40 135 160 110 500 Collector-Emitter Saturation Voltage VCE(sat) Ic=800mA,IB=80mA 0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=800mA,IB=80mA 1.2 V Base-Emitter Saturation Voltage VBE VCE=1V,Ic=10mA 1.0 V Current Gain Bandwidth Product fT VCE=10V,Ic=50mA 100 MHz Output Capacitance Cob VCB=10V,IE=0 f=1MHz 9.0 pF |
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