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HE8051 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-046,A CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 250-500 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Collector-Emitter voltage ( V) 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA Fig.2 DC current Gain Ic,Collector current (mA) 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 VCE=1V Fig.3 Base-Emitter on Voltage 10 0 10 1 10 2 10 3 Base-Emitter voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 VCE=1V Ic,Collector current (mA) 10 3 10 2 10 1 10 0 10 -1 10 1 10 2 10 3 10 4 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 VCE=10V Collector-Base voltage (V) 10 3 10 3 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1MHz IE=0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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