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BC817L-25-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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BC817L-25-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page BC817 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 www.unisonic.com.tw QW-R206-025.B TYPICAL CHARACTERISTICS 500 400 300 200 100 0 0.001 0.01 0.1 1 2 VCE = 5V 125℃ 25℃ -40℃ Typical Pulsed Current Gain vs Collector Current 0.01 0.1 3 1 0 0.1 0.2 0.3 0.4 0.5 0.6 ß = 10 25℃ -40℃ 125℃ Collector-Emitter Saturation Voltage vs Collector Current Collector Current, IC (A) Collector Current, IC (A) ß = 10 -40℃ 25℃ 125℃ 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 Base-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1 150℃ -40℃ 25℃ VCC = 5V Base-Emitter On Voltage vs Collector Current Collector Current, IC (mA) Collector Current, IC (A) 25 50 75 100 125 150 0.1 1 10 100 VCB = 40V Collector-Cutoff Current vs Ambient Temperature Ambient Temperature, TA (℃) 04 12 816 20 24 28 0 10 20 30 40 Collector-Base Capacitance vs Collector-Base Voltage Collector-Base Voltage, VCB (V) |
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