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IS61LV12816 Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc

Part No. IS61LV12816
Description  128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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IS61LV12816 Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc

 
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IS61LV12816
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. C
02/05/2003
ISSI®
OPERATING RANGE
Range
Ambient Temperature
VDD
Commercial
0°C to + 70°C
3.3V ± 10%
Industrial
–40°C to + 85°C
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage(1)
2VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND
≤ VIN ≤ VDD
–1
1
µA
ILO
Output Leakage
GND
≤ VOUT ≤ VDD, Outputs Disabled
–1
1
µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns).
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns).
PIN DESCRIPTIONS
A0-A16
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
VDD
Power
GND
Ground
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VDD
Power Supply Voltage Relative to GND
–0.3 to 4.0
V
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
TSTG
Storage Temperature
–65 to + 150
°C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
±20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliabil-
ity.


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