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81N11-H-AB3-I-R Datasheet(PDF) 5 Page - Unisonic Technologies

Part No. 81N11-H-AB3-I-R
Description  VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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81N11-H-AB3-I-R Datasheet(HTML) 5 Page - Unisonic Technologies

 
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81CXXX/81NXXX
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
5 of 15
www.unisonic.com.tw
QW-R502-039,I
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detect Voltage
VDF
1
VDF (T)
X0.98
VDF (T)
VDF (T)
X1.02
V
Hysteresis Range
VHYS
1
VDF
X0.02
VDF
X0.05
VDF
X0.08
V
Operating Voltage
VIN
1
VDF=1.6V ~ 6.0V
0.7
10.0
V
VIN=2.0V
1.0
3.0
µA
Supply Current
ISS
2
VIN=5.0V
2.0
4.2
µA
3
N-ch
VDS=0.5V, VIN =2.0V
7.9
mA
Output Current
IOUT
4
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
-15.4
mA
VDF
Temperature Characteristics
∆VDF
∆TOPR×VDF
±100
ppm/℃
Transient Delay Time
(VDR
VOUT inversion)
tDLY *
5
VIN changes from
0.6V ~ 10V
50
200
ms
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detect Voltage
VDF
1
VDF (T)
X0.98
VDF (T)
VDF (T)
X1.02
V
Hysteresis Range
VHYS
1
VDF
X0.02
VDF
X0.05
VDF
X0.08
V
Operating Voltage
VIN
1
VDF=1.6V ~ 6.0V
0.7
10.0
V
VIN =3.0V
1.3
3.4
µA
Supply Current
ISS
2
VIN =5.0V
2.0
4.2
µA
3
N-ch
VDS=0.5V, VIN =3.0V
10.1
mA
Output Current
IOUT
4
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
-15.4
mA
VDF
Temperature Characteristics
∆VDF
∆TOPR×VDF
±100
ppm/℃
Transient Delay Time
(VDR
VOUT inversion)
tDLY *
5
VIN changes from
0.6V ~ 10V
50
200
ms


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