4N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-061,E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current - (Note 1)

4.4

A

4.0

A

Continuous Drain Current

2.8

A

16

A

Avalanche Energy, Single Pulsed (Note 2)

260

mJ

10.6

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

106

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

62.5

°C/W

Junction-to-Case

3

°C/W

Case-to-Sink

0.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage

600

V

10

µA

Drain-Source Leakage Current

100

µA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature

Coefficient

BV

△

0.6

V/℃

On Characteristics

Gate Threshold Voltage

2.0

4.0

V

Drain-Source On-State Resistance

2.5

Ω

Forward Transconductance

4.0

S

Dynamic Characteristics

Input Capacitance

520 670

pF

Output Capacitance

70

90

pF

Reverse Transfer Capacitance

8

11

pF

Switching Characteristics

Turn-On Delay Time

13

35

ns

Turn-On Rise Time

45

100

ns

Turn-Off Delay Time

25

60

ns

Turn-Off Fall Time

(Note 4, 5)

35

80

ns

Total Gate Charge

15

20

nC

Gate-Source Charge

3.4

nC

Gate-Drain Charge

(Note 4, 5)

7.1

nC