2SK3050 datasheet(3/6 Pages) ROHM

Part #	2SK3050

Description	10V Drive Nch MOS FET

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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2SK3050

Transistors

Rev.A

3/5

Electrical characteristic curves

1

1000

500

200

100

50

5

210 20

10

5

1

2

0.5

0.05

0.02

0.1

0.2

0.01

Tc

=25°C

Single pulse

DRAIN-SOURCE VOLTAGE : VDS

(V)

Fig.1 Maximum safe operating area

Operation

in

this

area

is

limited

by

RDS(on)

10ms

10

89

6

4

27

5

3

1

0.4

0.8

1.2

1.6

2.0

0

DRAIN-SOURCE VOLTAGE : VDS

(V)

Fig.2 Typical output characteristics

VGS

=10V

5.5V

5V

4.5V

6V

Ta

=25°C

Pulsed

5

2

1

0.5

0.2

0.1

0.05

0.02

01234567

8

Fig.3 Typical transfer characteristics

GATE-SOURCE VOLTAGE : VGS

(V)

25

°C

125

°C

Ta

=−25°C

75

°C

VDS

=10V

Pulsed

−50

25

0

150

6

4

2

5

3

1

0

−25

50

75

100 125

CHANNEL TEMPERATURE : Tch

(

°C)

Fig.4 Gate threshold voltage

vs. channel temperature

VDS

=10V

lD

=1mA

10

50

100

0.1

0.2

0.5

0.01 0.02

0.05

12

5

10

Pulsed

VGS

=10V

2

5

20

DRAIN CURRENT : I D

(A)

Fig.5 Static drain-source on-state

resistance vs. drain current

Ta

=125°C

75

°C

−25°C

25

°C

20

8

9

010

15

25

3

4

5

6

7

53

GATE-SOURCE VOLTAGE : VGS

(V)

Fig.6 Static drain-source on-state

resistance vs. gate-source voltage

0

Ta

=25°C

Pulsed

ID

=2A

1A

0

−50

150

50

100

0

−25

25

75

125

15

10

5

Pulsed

VGS

=10V

Fig.7 Static drain-source on-state

resistance vs. channel temperature

CHANNEL TEMPERATURE : Tch

(

°C)

ID

=2A

1A

0.1

1

0.1 0.2

0.5

0.01 0.02 0.05

12

10

5

Pulsed

VDS

=10V

Ta

=−25°C

75

°C

125

°C

25

°C

0.02

0.05

0.2

0.5

2

DRAIN CURRENT : I D

(A)

Fig.8 Forward transfer admittance

vs. drain current

0.05

0.02

0.1

0.2

0.5

1

2

5

0

0.4

0.6

0.8

0.2

1.0

1.4

1.2

Ta

=125°C

75

°C

−25°C

25

°C

Fig.9 Reverse drain current

vs. source-drain voltage (

Ι )

SOURCE-DRAIN VOLTAGE : VSD

(V)

VGS

=0V

Pulsed

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