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2SK3018 Datasheet(PDF) 2 Page - Rohm

Part # 2SK3018
Description  2.5V Drive Nch MOS FET
Download  4 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SK3018 Datasheet(HTML) 2 Page - Rohm

  2SK3018_1 Datasheet HTML 1Page - Rohm 2SK3018_1 Datasheet HTML 2Page - Rohm 2SK3018_1 Datasheet HTML 3Page - Rohm 2SK3018_1 Datasheet HTML 4Page - Rohm  
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2SK3018
Transistor
Rev.B
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
RDS(on)
Ciss
|Yfs |
Coss
Crss
Min.
30
0.8
20
5
13
9
4
±1
1
1.5
8
713
µAVGS = ±20V, VDS = 0V
ID
= 10µA, VGS = 0V
VDS
= 30V, VGS = 0V
VDS
= 3V, ID = 100µA
ID
= 10mA, VGS = 4V
ID
= 1mA, VGS = 2.5V
VDS
= 5V
VDS
= 3V, ID = 10mA
VGS
= 0V
f
= 1MHz
V
µA
V
pF
mS
pF
pF
td(on)
15
ID
= 10mA, VDD 5V
ns
tr
35
VGS
= 5V
ns
td(off)
80
RL
= 500Ω
ns
tf
80
RG
= 10Ω
ns
Typ.
Max.
Unit
Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Static drain-source on-state
resistance
Electrical characteristic curves
0
1
23
45
0
0.05
0.1
0.15
DRAIN-SOURCE VOLTAGE : VDS (V)
3V
3.5V
2.5V
VGS=1.5V
4V
2V
Ta=25
°C
Pulsed
Fig.1 Typical output characteristics
04
0.1m
100m
GATE-SOURCE VOLTAGE : VGS (V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta=125
°C
75
°C
25
°C
−25
°C
VDS
=3V
Pulsed
Fig.2 Typical transfer characteristics
−50
0
0
1
1.5
2
CHANNEL TEMPERATURE : Tch (
°C)
0.5
−25
25
50
75
100
125
150
Fig.3 Gate threshold voltage vs.
channel temperature
VDS
=3V
ID=0.1mA
Pulsed
0.001
1
2
50
DRAIN CURRENT : ID (A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
Ta=125
°C
75
°C
25
°C
−25
°C
VGS
=4V
Pulsed
Fig.4 Static drain-source on-state
resistance vs. drain current (
Ι )
0.001
1
2
50
DRAIN CURRENT : ID (A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
Ta=125
°C
75
°C
25
°C
−25°C
VGS
=2.5V
Pulsed
Fig.5 Static drain-source on-state
resistance vs. drain current (
ΙΙ)
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
ID=0.1A
Ta=25
°C
Pulsed
ID=0.05A
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage


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