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2SK2504 Datasheet(PDF) 4 Page - Rohm |
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2SK2504 Datasheet(HTML) 4 Page - Rohm |
4 / 6 page 2SK2504 Transistors Rev.A 4/5 0.05 0.1 0.2 0.5 1 2 5 10 0 0.5 1.0 1.5 VGS =0V Pulsed Ta =125°C 75 °C −25°C 25 °C Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) SOURCE-DRAIN VOLTAGE : VSD (V) 5 1 0.5 0 1.0 1.5 0.01 0.05 0.1 0.5 VGS =10V 0V Ta =25°C Pulsed Fig.11 Reverse Drain Current vs. Source-Drain Voltage ( ΙΙ ) SOURCE-DRAIN VOLTAGE : VSD (V) 10000 1000 100 10 0.1 1 10 100 VGS =0V f =1MHz Ta =25 °C Ciss Coss Crss Fig.12 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS (V) 2 5 10 20 50 100 200 500 1000 0.1 0.05 0.2 0.5 1 2 5 10 DRAIN CURRENT : I D (A) Fig.13 Switching characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) Ta =25°C VDD =30V VGS =10V RG =10Ω Pulsed td(on) tr td(off) tf 10 0.2 0.5 500 1000 100 50 12 5 1 REVERSE DRAIN CURRENT : IDR (A) 0 Fig.14 Reverse Recovery Time vs. Reverse Drain Current 0.1 Ta =25°C di/dt =100A/µs VGS =0V Pulsed PULSE WIDTH : PW (s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 µ 100 µ 1m 10m 100m 1 10 10 1 0.1 0.01 0.001 0.02 0.05 0.1 D=1 0.2 0.5 Tc=25 °C θth(ch-c) (t)=r (t) θth(ch-c) θth(ch-c)=6.25°C/W PW T D=PW T Single pulse 0.01 |
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