2SK2504

Transistors

Rev.A

4/5

0.05

0.1

0.2

0.5

1

2

5

10

0

0.5

1.0

1.5

=0V

Pulsed

Ta

=125°C

75

°C

−25°C

25

°C

Fig.10 Reverse Drain Current

vs. Source-Drain Voltage (

Ι )

5

1

0.5

0

1.0

1.5

0.01

0.05

0.1

0.5

=10V

0V

Ta

=25°C

Pulsed

Fig.11 Reverse Drain Current

vs. Source-Drain Voltage (

ΙΙ )

10000

1000

100

10

0.1

1

10

100

=0V

f

=1MHz

Ta

=25

°C

Fig.12 Typical Capacitance

vs. Drain-Source Voltage

2

5

10

20

50

100

200

500

1000

0.1

0.05

0.2

0.5

1

2

5

10

(A)

Fig.13

Switching characteristics

(See Figures 16 and 17 for

the measurement circuit and

resultant waveforms)

Ta

=25°C

=30V

=10V

=10Ω

Pulsed

10

0.2

0.5

500

1000

100

50

12

5

1

(A)

0

Fig.14 Reverse Recovery Time

vs. Reverse Drain Current

0.1

Ta

=25°C

di/dt

=100A/µs

=0V

Pulsed

PULSE WIDTH : PW

(s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

10

µ

100

µ

1m

10m

100m

1

10

10

1

0.1

0.01

0.001

0.02

0.05

0.1

D=1

0.2

0.5

Tc=25

°C

PW

T

D=PW

T

Single pulse

0.01