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2SB1198 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. 2SB1198
Description  LOW FREQUENCY PNP TRANSISTOR
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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2SB1198 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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UTC2SB1198
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-040,A
ELECTRICAL CHARACTERISTICS CURVES
0-0.2
-2
-1m
Base toEmitterVoltage:V BE(V)
Figure 1.Grounded Emitter
PropagationCharacteristics
Collector Current : Ic(A)
Figure 3.DC Current Gain
vs.Collector Current
-0.4 -0.6 -0.8
-1.4
-1.2
-1.0
-2m
-5m
0
-0.5
0
Collector toEmitterVoltage:V CE(V)
Figure 2.Grounded Emitter
OutputCharacteristics
-0.1
-0.4
-0.8
-1.6
-2.0
-1.2
-0.2
-0.3
-0.4
IB=0mA
Ta=25℃
-1.0mA
-0.5mA
Figure4.Collector-emitterSaturation
Voltage vs.CollectorCurrent (I)
-10m
-30mA
-45mA
-5.0mA
-1.5mA
-20mA
-25mA
Collector Current : Ic(mA)
-20m
-50m
-100m
-200m
-500m
-1
-5
-10
VCE= -3V
Ta=25℃
Ta=100℃
Ta= -25℃
-40mA
-35mA
20
10
50
100
200
-10m
-1
-100m
500
1000
VCE= -3V
-1m
Ta=25℃
Ta=100℃
Ta= -25℃
-20m
-10m
-50m
-100m
-200m
-10
-1A
-100
-500m
-1
-1
Ta=25℃
Ic/IB=50
-2
20
10
Figure5.Collector-emitterSaturation
Voltage vs.CollectorCurrent (II)
Collector Current : Ic(mA)
-20m
-10m
-50m
-100m
-200m
-10
-100
-500m
-1
-1
Ta=100 ℃
Ic/IB=10
-2
-1A
Ta=25℃
Ta= -25℃
Figure6.Collector-emitterSaturation
Voltage vs.Collector Current (III)
Collector Current : Ic(mA)
-20m
-10m
-50m
-100m
-200m
-10
-100
-500m
-1
-1
Ta=100℃
Ic/IB=20
-2
-1A
Ta=25 ℃
Ta= -25 ℃


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