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2SA1300 Datasheet(PDF) 1 Page - Unisonic Technologies |
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2SA1300 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-012,A SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) SOT-89 1 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATIOS UNIT Collector-Base Voltage VCBO -20 V VCES -20 Collector-Emitter Voltage VCEO -10 V Emitter-Base Voltage VEBO -6 V DC Ic -2 Collector Current Pulsed (Note) lcP -5 A Base Current IB -2 A Collector Power Dissipation Pc 750 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55~150 °C Note :Pulse Width= 10ms(Max.),Duty Cycle=30%(Max.) ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 -10 - - V Emitter-collector breakdown voltage V(BR)EBO IE= -1mA, IC=0 -6 - - V Collector cut-off current ICBO VCE = -20V, IE =0 - - -100 nA Emitter cut-off current IEBO VBE = -6V, IC =0 - - -100 nA hFE1 VCE= -1V, Ic=0.5A 140 - 600 DC current Gain hFE2 VCE= -1V, Ic= -4A 60 120 - Collector-emitter saturation voltage VCE(sat) Ic= -2A, IB= -50mA - -0.2 -0.5 V Base-emitter voltage VBE VCE= -1V, Ic= -2A - -0.83 -1.5 V Current gain bandwidth product fT VCE= -1V,Ic= -0.5A - 140 - MHz Output capacitance Cob VCE= -10V, IE=0, f=1MHz - 50 - pF CLASSIFICATIONS OF hFE1 RANK Y GR BL |
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