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2N3904 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. 2N3904
Description  NPN GENERAL PURPOSE AMPLIFIER
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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2N3904 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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2N3904
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R201-027,B
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Collector Dissipation
PC
625
mW
Junction Temperature
TJ
150
Operating and Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=10µA, IE=0
60
V
Collector-Emitter Breakdown Voltage (note)
BVCEO
IC=1mA,IB=0
40
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA, IC=0
6
V
VCE(SAT)1 IC=10mA, IB=1mA
0.2
Collector-Emitter Saturation Voltage (note)
VCE(SAT)2 IC=50mA, IB=5mA
0.3
V
VBE(SAT)1 IC=10mA, IB=1mA
0.65
0.85
Base-Emitter Saturation Voltage (note)
VBE(SAT)2 IC=50mA, IB=5mA
0.95
V
Collector Cut-off Current
ICBO
VCE=30V, VEB=3V
50
nA
Base Cut-off Current
IBL
VCE=30V, VEB=3V
50
nA
hFE1
VCE=1V, IC=0.1mA
40
hFE2
VCE=1V, IC=1mA
70
hFE3
VCE=1V, IC=10mA
100
300
hFE4
VCE=1V, IC=50mA
60
DC Current Gain (note)
hFE5
VCE=1V, IC=100mA
30
Current Gain Bandwidth Product
fT
VCE=20V, IC=10mA, f=100MHz
300
MHz
Output Capacitance
Cob
VCB=5V, IE=0, f=1MHz
4
pF
Turn on Time
tON
VCC=3V,VBE=0.5V,IC=10mA,
IB1=1mA
70
ns
Turn off Time
tOFF
IB1=1B2=1mA
250
ns
Note: Pulse test: Pulse Width≦300
µs, Duty Cycle≦2%


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