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X1049A Datasheet(PDF) 1 Page - Unisonic Technologies

Part # X1049A
Description  HIGH GAIN TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

X1049A Datasheet(HTML) 1 Page - Unisonic Technologies

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UTC X1049A
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-061,A
HIGH GAIN TRANSISTOR
FEATURES
*VCEV = 80V
*High Gain
*20 Amps pulse current
APPLICATIONS
*LCD Backlight converters
*Emergency lighting
*DC-DC converters
TO-92
1
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
DC
4
Collector Current
Pulse
IC
20
A
Base Current
IB
500
mA
Power Dissipation
PD
1
W
Junction Temperature
Tj
-55 ~+200
℃
Storage Temperature
Tstg
-55~ +200
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified).
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
VCBO
IC=100µA
80
120
V
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA
25
35
V
Collector-Emitter Breakdown Voltage
VCES
IC=100µA
80
120
V
Collector-Emitter Breakdown Voltage
VCEV
IC=100µA, VEB=1V
80
120
V
Emitter-Base Breakdown Voltage
VEBO
IE=100µA
5
8.75
V
Collector Cut-Off Current
ICBO
VCB=50V
0.3
10
nA
Emitter Cut-Off Current
IEBO
VEB=4V
0.3
10
nA
Collector Emitter Cut-Off Current
ICES
VCES=50V
0.3
10
nA


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