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MMBT4401 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. MMBT4401
Description  NPN GENERAL PURPOSE AMPLIFIER
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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MMBT4401 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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MMBT4401
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R206-035,B
ABSOLUTE MAXIMUM RATING* (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current-Continuous
IC
600
mA
Total Device Dissipation
Derate above 25℃
PD
350
2.8
mW
mW/℃
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25℃, unless otherwise specified)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Thermal Resistance, Junction to Ambient
θJA
357
/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=0.1mA, IE=0
60
V
Collector-Emitter Breakdown Voltage (note)
BVCEO IC=1mA, IB=0
40
V
Emitter-Base Breakdown Voltage
BVEBO IE=0.1mA, IC=0
6
V
Collector Cut-off Current
ICEX
VCE=35V, VEB=0.4V
µA
Base Cut-off Current
IBL
VCE=35V, VEB=0.4V
µA
ON CHARACTERISTICS
(note)
hFE1
VCE=1V, IC=0.1mA
20
hFE2
VCE=1V, IC=1mA
40
hFE3
VCE=1V, IC=10mA
80
hFE4
VCE=1V, IC=150mA
100
300
DC Current Gain
hFE5
VCE=2V, IC=500mA
40
Collector-Emitter Saturation Voltage
VCE(SAT1)
VCE(SAT2)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.4
0.75
V
V
Base-Emitter Saturation Voltage
VBE(SAT1)
VBE(SAT2)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.75
0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
fT
VCE=10V, IC=20mA, f=100MHz 250
MHz
Collector-Base Capacitance
Ccb
VCB=5V, IE=0, f=140kHz
6.5
pF
Emitter-Base Capacitance
Ceb
VBE=0.5V, IC=0, f=140kHz
30
pF
Input Impedance
hie
VCE=10V, IC=1mA, f=1kHz
1
15
kΩ
Voltage Feedback Ratio
hre
VCE=10V, IC=1mA, f=1kHz
0.1
8
×10
-4
Small-Signal Current Gain
hfe
VCE=10V, IC=1mA, f=1kHz
40
500
Output Admittance
hoe
VCE=10V, IC=1mA, f=1kHz
1
30
µmhos
SWITCHING CHARACTERISTICS
Delay Time
tD
VCC=30V, VEB=2V
IC=150mA IB1=15mA
15
ns
Rise Time
tR
VCC=30V, VEB=2V
IC=150mA IB1=15mA
20
ns
Storage Time
tS
225
ns
Fall Time
tF
VCC=30V, IC=150mA
IB1= IB2=15mA
30
ns
Note: Pulse test: PulseWidth≤300
µs, Duty Cycle≤2%


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