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MJE13009 Datasheet(PDF) 2 Page - Unisonic Technologies

Part No. MJE13009
Description  SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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MJE13009 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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MJE13009
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
www.unisonic.com.tw
QW-R203-024,D
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Base Voltage
VCBO
700
V
Emitter Base Voltage
IEBO
9
V
Continuous
IC
12
Collector Current
Peak*
ICM
24
A
Continuous
IB
6
Base Current
Peak*
IBM
12
A
Continuous
IE
18
Emitter Current
Peak*
IEM
36
A
2
W
Total Power Dissipation @ Ta = 25℃
Derate above 25℃
PD
16
mW/℃
100
W
Total Power Dissipation @ TC = 25℃
Derate above 25℃
PD
800
mW/℃
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction to Ambient
θJA
54
/W
Thermal Resistance Junction to Case
θJC
4
/W
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage
VCEO
IC = 10mA, IB = 0
400
V
Collector Cutoff Current
VCBO=Rated Value
ICBO
VBE(OFF) = 1.5Vdc
VBE(OFF) = 1.5Vdc, TC = 100℃
1
5
mA
Emitter Cutoff Current
IEBO
VEB = 9Vdc, IC = 0
1
mA
*ON CHARACTERISTICS
hFE1
IC = 5A,VCE = 5V
40
DC Current Gain
hFE 2
IC = 8A,VCE = 5V
30
IC = 5A, IB = 1A
1
V
IC = 8A, IB = 1.6A
1.5
V
IC = 12A, IB = 3A
3
V
Current-Emitter Saturation Voltage
VCE(SAT)
IC = 8A, IB = 1.6A, TC = 100℃
2
V
IC = 5A, IB = 1A
1.2
V
IC = 8A, IB = 1.6A
1.6
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = 8A, IB = 1.6A, TC = 100℃
1.5
V
DYNAMIC CHARACTERISTICS
Transition frequency
fT
IC = 500mA, VCE = 10V, f = 1MHz
4
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 0.1MHz
180
pF
SWITCHING CHARACTERISTIC
S (Resistive Load, Table 1)
Delay Time
tDLY
0.06
0.1
µs
Rise Time
tR
0.45
1
µs
Storage Time
tS
1.3
3
µs
Fall Time
tF
VCC = 125Vdc, IC = 8A
IB1 = IB2 = 1.6A, tP = 25µs
Duty Cycle ≤1%
0.2
0.7
µs
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
tS
0.92
2.3
µs
Crossover Time
tC
IC=8A, Vclamp=300V, IB1=1.6A
VBE(OFF) = 5V, TC = 100℃
0.12
0.7
µs
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%


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