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HSD88 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HSD88
Description  Silicon Schottky Barrier Diode for Detector, Mixer
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HSD88 Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HSD88
Rev.1.00 Apr 26, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
10
V
Average rectified current
IO
15
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
VF1
0.350
0.420
IF = 1 mA
Forward voltage
VF2
0.500
0.580
V
IF = 10 mA
IR1
0.2
VR = 2 V
Reverse current
IR2
10
µA
VR = 10 V
Capacitance
C
0.80
pF
VR = 0 V, f = 1 MHz
ESD-Capability *
1
30
C = 200 pF, Both forward and
reverse direction 1 pulse.
Notes
: 1. Failure criterion ; IR > 0.4 µA at VR = 2 V
2. Please do not use the soldering iron due to avoid high stress to the SFP package.


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