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BUK866-400IZ Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK866-400IZ Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 8 page Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT Fig.19. Typical Turn-off dV CE/dt vs. RG conditions: T j=125 ˚C; IC=8 A; VCL=300 V; LC=5 mH. Fig.20. Test circuit for inductive load switching times. Fig.21. Definitions of inductive load switching times. Fig.22. Reverse Breakdown Voltage V (BR)ECS = f(Tj); conditions: IEC = 50 mA Fig.23. Test circuit for clamped turn-off energy test Fig.24. Definition of clamping energy E CER 0 2 4 Rg / kOhm dVce/dt (V/us) PMG35A 150 100 50 0 1 35 0 100 Tj / degC V(BR)ECS / V BUK856-400IZ 35 30 25 20 min. typ. -50 50 150 : adjust for correct Ic Vcc V Lc D.U.T. R 0V t p 0R1 G VGE IC measure CL : adjust for correct Ic Vcc Lc D.U.T. R 0V t p 0R1 G V IC measure GE GE C CE t t td(off) tf tc 10% 90% 10% 90% V V I t t V(cl)cer I Vce Vge V Ecer Ic Vce x Ic P t December 1996 6 Rev. 1.100 |
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