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BUK856-800A Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK856-800A Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A Fig.7. Typical transconductance, T j = 25 ˚C. g fe = f(IC); conditions: VCE = 15 V Fig.8. Typical turn-on gate-charge characteristics. V GE = f(QG); conditions: IC = 12 A; parameter VCE Fig.9. Typical Switching Times vs. T j conditions: I C = 12 A; VCL = 500 V; RG = 25 Ω Fig.10. Typical capacitances, C ies, Coes, Cres. C = f(V CE); conditions: VGE = 0 V; f = 1MHz. Fig.11. Typical turn-off dV CE/dt vs. RG conditions: I C = 12 A; VCL = 500 V; Tj = 125 ˚C Fig.12. Typical Switching losses vs. T j conditions: I C = 12 A; VCL = 500 V; RG = 25 Ω 0 20 40 IC / A gfe / S BUK8Y6-800A 15 10 5 0 10 30 50 0 20 40 VDS / V C / pF Cies Coes Cres 10 100 1000 10000 10 30 BUK8Y6-800A 0 20 40 60 QG / nC VGE / V BUK8Y6-800A 16 14 12 10 8 6 4 2 0 10 30 50 1 100 Rg / Ohm dVCE/dt (V/ns) BUK8Y6-800A 15 10 5 0 10 1000 0 20 40 60 80 100 120 140 Tj / C t / ns BUK8Y6-800A 600 500 400 300 200 100 0 td(off) tf 0 20 40 60 80 100 120 140 Tj / C E / mJ BUK8Y6-800A 1.5 1 0.5 0 E(on) E(off) March 1993 4 Rev 1.000 |
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