BU406-A-TF3-T datasheet(2/4 Pages) UTC

Part #	BU406-A-TF3-T

Description	SILICON NPN SWITCHING TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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BU406

NPN PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-021,D

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (IE=0)

VCBO

400

V

Collector-Emitter Voltage (VBE=-1.5V)

VCEV

400

V

Collector-Emitter Voltage (IB=0)

VCEO

200

V

Emitter-Base Voltage (IC=0)

VEBO

6

V

Collector Current

IC

7

A

Collector Peak Current (repetitive)

ICM

10

A

Collector Peak Current (tp=10ms)

ICM

15

A

Base Current

IB

4

A

Collector Dissipation (TC≤25℃)

PC

60

W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-65 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance, Junction to Ambient

θJA

70

℃

/W

Thermal Resistance, Junction to Case

θJC

2.08

/W

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collect Cutoff Current (VBE=0)

ICES

VCE=400V

VCE=250V

TC=150°C

VCE=250V

5

100

1

mA

µA

mA

Emitter Cut-off Current (IC=0)

IEBO

VBE=6V

1

mA

Collector-Emitter Saturation Voltage

VCE(SAT)* IC=5A, IB=0.5A

1

V

Base-Emitter Saturation Voltage

VBE(SAT)* IC=5A, IB=0.5A

1.2

V

DC Current Gain

hFE

VCE=10V, IC=500mA

70

240

Transition Frequency

fT

IC=500mA, VCE=10V

10

MHz

Turn-off Time

tOFF

IC=5A, IB=0.5A

0.75

µs

Second Breakdown Collector Current

Is/b

VCE=40V, t=10ms

4

A

*

Pulse duration=300

µs, duty cycle 1.5%

CLASSIFICATION OF hFE

RANK

A

B

RANGE

70 ~ 120

110 ~ 240

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