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S8550 Datasheet(PDF) 1 Page - Unisonic Technologies

Part No. S8550
Description  LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
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Maker  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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S8550 Datasheet(HTML) 1 Page - Unisonic Technologies

   
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UTC S8550
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-014,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC S8550 is a low voltage high current small
signal
PNP transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC S8050
TO-92
1
1:EMITTER 2:BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETERS
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Dissipation(Ta=25
°C)
Pc
1
W
Collector Current
Ic
-700
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=-100
µA,IE=0
-30
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=-1mA,IB=0
-20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100
µA,Ic=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-30V,IE=0
-1
µA
Emitter Cut-Off Current
IEBO
VEB=-5V,Ic=0
-100
nA
DC Current Gain(note)
hFE1
hFE2
hFE3
VCE=-1V,Ic=-1mA
VCE=-1V,Ic=-150 mA
VCE=-1V,Ic=-500mA
100
120
40
110
400
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=-500mA,IB=-50mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
Ic=500mA,IB=-50mA
-1.2
V
Base-Emitter Saturation Voltage
VBE
VCE=-1V,Ic=-10mA
-1.0
V
Current Gain Bandwidth Product
fT
VCE=-10V,Ic=-50mA
100
MHz
Output Capacitance
Cob
VCB=10V,IE=0
f=1MHz
9.0
pF


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