ZXMP6A18K

Issue 1 - March 2006

4

www.zetex.com

© Zetex Semiconductors plc 2006

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

-60

V

Zero gate voltage drain current

-1.0

µA

Gate-body leakage

100

nA

Gate-source threshold voltage

-1.0

V

Static drain-source on-state

NOTES:

(*) Measured under pulsed conditions. Width

300µs. Duty cycle

2%.

0.055

0.080

Forward transconductance (*)(‡)

gfs

8.7

S

Dynamic (‡)

Input capacitance

1580

pF

f=1MHz

Output capacitance

160

pF

Reverse transfer capacitance

140

pF

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on delay time

4.6

ns

Rise time

5.8

ns

Turn-off delay time

55

ns

Fall time

23

ns

Gate charge

23

nC

Total gate charge

44

nC

Gate-source charge

3.9

nC

Gate-drain charge

9.8

nC

Source-drain diode

Diode forward voltage (*)

-0.85

-0.95

V

Reverse recovery time (‡)

37

ns

di/dt= 100A/µs

Reverse recovery charge (‡)

56

nC