© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 3

1

Publication Order Number:

MMBV3700LT1/D

MMBV3700LT1, MPN3700

High Voltage Silicon Pin

Diodes

These devices are designed primarily for VHF band switching

applications but are also suitable for use in general−purpose switching

circuits. They are supplied in a cost−effective plastic package for

economical, high−volume consumer and industrial requirements.

They are also available in surface mount.

Features

Optimum Reliability

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

20

Vdc

Forward Power Dissipation

MMBV3700LT1

Derate above 25

°C

200

2.8

mW

mW/

°C

Forward Power Dissipation

MPN3700

Derate above 25

°C

280

2.8

mW

mW/

°C

Junction Temperature

+125

°C

Storage Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

http://onsemi.com

TO−92 (TO−226AC)

CASE 182−06

STYLE 1

MARKING

DIAGRAM

MPN

= Device Code

3700

= Specific Device

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

2

Cathode

1

Anode

1

2

MPN

3700

AYWW

G

G

4R

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

MARKING

DIAGRAM

3

Cathode

1

Anode

SOT−23 (TO−236AB)

CASE 318 −08

STYLE 8

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

2

1

3

4R M

G

G

TO−92

SOT−23