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MGF7169C Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. MGF7169C
Description  UHF BAND GaAs POWER AMPLIFIER
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MGF7169C Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI ELECTRIC
(2/20)
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
6
V
-30 ~ +100
-30 ~ +85
-4
V
Vd1,Vd2
Tc(op)
Tstg
Vg
Pi
Drain supply voltage
Operating case temperature
Storage temperature
Gate supply voltage
Input power
dBm
15
*1.Each maximum rating is guaranteed independently.
˚C
˚C
MGF7169C
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Aug. '97
Preliminary
information
Note : Sampling inspection
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
Symbol
Pout
Idt
Parameter
Output power
Total drain current
MIN
TYP
MAX
Unit
dBm
f
Test conditions
frequency
1850
1910 MHz
3
Limits
Ig
Gate current
mA
520
mA
-3
dBc
-30
2sp
2nd harmonics
rin
input VSWR
Damage
with-standing
Stability
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=10, All phase
Time=10 sec
No damage
No oscillation
Spurious level
-60dBc
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=3:1, All phase
Note
Note
28
Vd1=Vd2=3.0V,Vg1=Vg2=-2.0V,
Pin=7dBm CDMA modulated signal
based on IS-95 STD.
(1.2288Mbps spreading,OQPSK)
ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
480
450
450
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V
Idle_Id
Idle current
mA
150
50
Vg1=Vg2=-2.0V, Po=28dBm
Vg1=Vg2=-2.5V, Po=12dBm


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