© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 4

1

Publication Order Number:

MMBV432LT1/D

MMBV432LT1

Preferred Device

Silicon Tuning Diode

This device is designed for FM tuning, general frequency control

and tuning, or any top−of−the−line application requiring

back−to−back diode configuration for minimum signal distortion and

detuning. This device is supplied in the SOT−23 plastic package for

high volume, pick and place assembly requirements.

Features

Guaranteed

±1.0% (Max) Over Specified Tuning Range

Rating

Symbol

Value

Unit

Reverse Voltage

14

Vdc

Forward Current

200

mAdc

Derate above 25

°C

225

1.8

mW

mW/

°C

Junction Temperature

+125

°C

Storage Temperature Range

−55 to +125

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

http://onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 9

Device

Package

ORDERING INFORMATION

MMBV432LT1

SOT−23

3,000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBV432LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

1

2

3

DUAL VOLTAGE VARIABLE

CAPACITANCE DIODE

12

3

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

M4B M

G

G

M4B = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM