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MMBT6428LT1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MMBT6428LT1
Description  Amplifier Transistors NPN Silicon
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBT6428LT1 Datasheet(HTML) 2 Page - ON Semiconductor

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MMBT6428LT1, MMBT6429LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT6428
(IC = 1.0 mAdc, IB = 0)
MMBT6429
V(BR)CEO
50
45
Vdc
Collector − Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
MMBT6428
(IC = 0.1 mAdc, IE = 0)
MMBT6429
V(BR)CBO
60
55
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
0.1
mAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
0.01
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
0.01
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
hFE
250
500
250
500
250
500
250
500
650
1250
Collector − Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.6
Vdc
Base − Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
VBE(on)
0.56
0.66
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
700
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
3.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model


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