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MLP2N06CL Datasheet(PDF) 2 Page - ON Semiconductor |
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MLP2N06CL Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page ![]() MLP2N06CL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (ID = 20 mAdc, VGS = 0 Vdc) (ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C) V(BR)DSS 58 58 62 62 66 66 Vdc Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) (VDS = 40 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − 0.6 6.0 5.0 20 mAdc Gate−Source Leakage Current (VG = 5.0 Vdc, VDS = 0 Vdc) (VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C) IGSS − − 0.5 1.0 5.0 20 mAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (ID = 250 mAdc, VDS = VGS) (ID = 250 mAdc, VDS = VGS, TJ = 150°C) VGS(th) 1.0 0.6 1.5 1 2.0 1.6 Vdc Static Drain Current Limit (VGS = 5.0 Vdc, VDS = 10 Vdc) (VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C) ID(lim) 3.8 1.6 4.4 2.4 5.2 2.9 Adc Static Drain−to−Source On−Resistance (ID = 1.0 Adc, VGS = 5.0 Vdc) (ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C) RDS(on) − − 0.3 0.53 0.4 0.7 W Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc) gFS 1.0 1.4 − mhos Static Source−to−Drain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc) VSD − 1.1 1.5 Vdc SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 30 Vdc, ID = 1.0 Adc, VGS(on) = 5.0 Vdc, RGS = 25 W) td(on) − 1.0 1.5 ms Rise Time tr − 3.0 5.0 Turn−Off Delay Time td(off) − 5.0 8.0 Fall Time tf − 3.0 5.0 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Figure 1. Output Characteristics Figure 2. Transfer Function VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C VDS ≥ 7.5 V TJ = 150°C 25 °C −55 °C 01 2 3 8 2.5 2.0 1.5 1.0 0.5 0 3.0 3.5 4.0 45 6 7 02 4 6 8 5 4 3 2 1 0 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 2.0 V |
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