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MJW21195 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MJW21195
Description  16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
Download  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJW21195 Datasheet(HTML) 2 Page - ON Semiconductor

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MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
VCEO(sus)
250
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
100
mAdc
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
IEBO
50
mAdc
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
50
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
IS/b
4.0
2.25
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
20
8
80
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
2.0
Vdc
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.0
3
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
0.8
0.08
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
500
pF


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