MJH11017_06 datasheet(4/6 Pages) ONSEMI

Part #	MJH11017

Description	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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4

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

20

30

140

60

180

100

10

20

260

220

0

Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)

L = 200 mH

IC/IB1 ≥ 50

TC = 100°C

VBE(off) = 0−5.0 V

RBE = 47 W

DUTY CYCLE = 10%

0

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current conditions during

reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 5 gives RBSOA characteristics.

TC = 150°C

000

PNP

NPN

Figure 6. DC Current Gain

0.2

15

3.0

1.0

0.5

5.0

10

0.3

TC = 150°C

25°C

−55 °C

VCE = 5.0 V

IC, COLLECTOR CURRENT (AMPS)

00

IC, COLLECTOR CURRENT (AMPS)

PNP

NPN

500

200

0.7

1000

2000

5000

10,000

0.2

15

3.0

1.0

0.5

5.0

10

0.3

7.0

25°C

−55 °C

VCE = 5.0 V

100

500

200

0.7

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