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MJE15031 Datasheet(PDF) 3 Page - ON Semiconductor |
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MJE15031 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) http://onsemi.com 3 t, TIME (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.2 SINGLE PULSE Figure 2. Thermal Response 0.5 D = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01 20 2.0 Figure 3. Forward Bias Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 16 10 0.02 20 120 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25°C dc 100 ms 5.0 10 150 1.0 50 0.1 5ms MJE15028 MJE15029 MJE15030 MJE15031 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 _C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 8.0 0 Figure 4. Reverse−Bias Switching Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 5.0 0 120 140 5 V VBE(off) = 9 V 100 110 150 3.0 130 2.0 1.0 VR, REVERSE VOLTAGE (VOLTS) 10 150 500 1000 50 Figure 5. Capacitances 200 100 30 10 7.0 5.0 1.5 3.0 20 50 IC/IB = 10 TC = 25°C 3 V 1.5 V Cib (NPN) Cob (PNP) 100 30 0 V Cib (PNP) Cob (NPN) |
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