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MC100EP31 Datasheet(PDF) 4 Page - ON Semiconductor |
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MC100EP31 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 11 page MC10EP31, MC100EP31 http://onsemi.com 4 Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max IEE Power Supply Current 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 3) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 3) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single−Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single−Ended) 1365 1690 1430 1755 1490 1815 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 3. All loading with 50 W to VCC − 2.0 V. Table 6. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 4) Symbol −40°C 25°C 85°C Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 5) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 5) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single−Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single−Ended) 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 5. All loading with 50 W to VCC − 2.0 V. Table 7. 10EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 6) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max IEE Power Supply Current 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 7) −1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV VOL Output LOW Voltage (Note 7) −1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV VIH Input HIGH Voltage (Single−Ended) −1210 −885 −1145 −820 −1085 −760 mV VIL Input LOW Voltage (Single−Ended) −1935 −1610 −1870 −1545 −1810 −1485 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 6. Input and output parameters vary 1:1 with VCC. 7. All loading with 50 W to VCC − 2.0 V. |
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