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MJE5740 Datasheet(PDF) 4 Page - ON Semiconductor

Part # MJE5740
Description  NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5740 Datasheet(HTML) 4 Page - ON Semiconductor

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MJE5740, MJE5742
http://onsemi.com
4
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
NOTE:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
PW
DUTY CYCLE ≤ 10%
tr, tf ≤ 10 ns
68
1
k
0.001 mF
0.02 mF
1N493
3
270
+5 V
1
k 2N2905
47
1/2
W
100
−VBE(off)
MJE20
0
T.U.T.
IB
RB
1N493
3
1N493
3
33
33
2N222
2
1
k
MJE21
0
VCC
+5 V
L
IC
MR826
*
Vclamp
*SELECTED FOR ≥ 1 kV
VCE
5.1
k
51
+VCC
RC
SCOPE
−4 V
D
1
RB
TUT
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200 mH/20 A
Lcoil = 200 mH
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
VCC = 250 V
D1 = 1N5820 OR EQUIV.
IC
VCE
IC(pk)
t1
tf
t
t
t2
TIM-
E
VCE OR
Vclamp
tf
CLAMPED
t1 ADJUSTED TO
OBTAIN IC
t1
Lcoil (ICpk)
VCC
t2
Lcoil (ICpk)
Vclamp
TEST EQUIPMENT
SCOPE−TEKTRONICS
475 OR EQUIVALENT
+10 V
25 ms
0
− 9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
Table 1. Test Conditions for Dynamic Performance
Figure 5. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
1
0.2
0.1
1.4
0.8
1.2
10
5
2
1
0.5
0.2
1.6
1.8
0.6
0.4
hFE = 20
+25 °C
−55 °C
+150°C


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