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MJE270 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MJE270
Description  2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MJE270 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MJE270 (NPN), MJE271 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
100
Vdc
Collector Cutoff Current
(VCE = 100 Vdc, IB = 0)
ICEO
1.0
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
0.3
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
0.1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Non−repetitive)
IS/b
375
Adc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 20 mAdc, VCE = 3.0 Vdc)
(IC = 120 mAdc, VCE = 10 Vdc)
hFE
500
1500
Collector−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 0.2 mAdc)
(IC = 120 mAdc, IB = 1.2 mAdc)
VCE(sat)
2.0
3.0
Vdc
Base−Emitter On Voltage
(IC = 120 mAdc, VCE = 10 Vdc)
VBE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 0.05 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
fT
6.0
MHz
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
10,000
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
100
0.05
0.3
1.0 1.5
1000
700
Figure 2. Safe Operating Area
7000
300
VCE = 3.0 V
150°C
25°C
3000
0.1
0.7
5000
500
0.03
0.07
0.015
0.5
−55 °C
10
1.0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.01
100
5.0
0.1
0.05
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
7.0 10
dc
1.0
0.5
MJE270/MJE271
3.0
30
70


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