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MJD18002D2 Datasheet(PDF) 1 Page - ON Semiconductor |
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MJD18002D2 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 11 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Publication Order Number: MJD18002D2/D MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread ( ±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need to guarantee an hFE window. Features • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • Integrated Collector−Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCEsat • Characteristics Make It Suitable for PFC Application • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V • Six Sigma® Process Providing Tight and Reproductible Parameter Spreads • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 450 Vdc Collector−Base Breakdown Voltage VCBO 1000 Vdc Collector−Emitter Breakdown Voltage VCES 1000 Vdc Emitter−Base Voltage VEBO 11 Vdc Collector Current − Continuous Collector Current − Peak (Note 1) IC ICM 2.0 5.0 Adc Base Current − Continuous Base Current − Peak (Note 1) IB IBM 1.0 2.0 Adc THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 50 0.4 W W/ °C Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Thermal Resistance, Junction−to−Case RqJC 5.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 71.4 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8 ″ from Case for 5 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%. POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Device Package Shipping† ORDERING INFORMATION MJD18002D2T4 DPAK 3000/Tape & Reel DPAK CASE 369C STYLE 1 MARKING DIAGRAM Y = Year WW = Work Week 18002D2 = Device Code G = Pb−Free Package 1 2 3 4 YWW 180 02D2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com MJD18002D2T4G DPAK (Pb−Free) 3000/Tape & Reel |
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