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MCR100 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MCR100
Description  Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MCR100 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MCR100 Series
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
MCR100−3
MCR100−4
MCR100−6
MCR100−8
VDRM,
VRRM
100
200
400
600
V
On-State RMS Current, (TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)
ITSM
10
A
Circuit Fusing Consideration, (t = 8.3 ms)
I2t
0.415
A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0
ms)
PGM
0.1
W
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)
PG(AV)
0.10
W
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0
ms)
IGM
1.0
A
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0
ms)
VGRM
5.0
V
Operating Junction Temperature Range @ Rate VRRM and VDRM
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
75
200
°C/W
Lead Solder Temperature
(
t1/16″ from case, 10 secs max)
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
TC = 25°C
(VD = Rated VDRM and VRRM; RGK = 1 kW)TC = 110°C
IDRM, IRRM
10
100
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
VTM
1.7
V
Gate Trigger Current (Continuous dc) (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, RL = 100 W)
IGT
40
200
mA
Holding Current(2)
TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA)
TC = −40°C
IH
0.5
5.0
10
mA
Latch Current
TC = 25°C
(VAK = 7.0 V, Ig = 200 mA)
TC = −40°C
IL
0.6
10
15
mA
Gate Trigger Voltage (Continuous dc) (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C
VGT
0.62
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C)
dV/dt
20
35
V/
ms
Critical Rate of Rise of On−State Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
di/dt
50
A/
ms
*Indicates Pulse Test: Pulse Width
≤ 1.0 ms, Duty Cycle ≤ 1%.
3. RGK = 1000 W included in measurement.
4. Does not include RGK in measurement.


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