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MCR72 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MCR72
Description  Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MCR72 Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 20005
December, 2005 − Rev. 3
1
Publication Order Number:
MCR72/D
MCR72−3, MCR72−6,
MCR72−8
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Features
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability
Small, Rugged Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR72−3
MCR72−6
MCR72−8
VDRM,
VRRM
100
400
600
V
On-State RMS Current
(180
° Conduction Angles; TC = 83°C)
IT(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = 110°C)
ITSM
100
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Voltage
(t
≤ 10 ms, TC = 83°C)
VGM
"5.0
V
Forward Peak Gate Current
(t
≤ 10 ms, TC = 83°C)
IGM
1.0
A
Forward Peak Gate Power
(t
≤ 10 ms, TC = 83°C)
PGM
5.0
W
Average Gate Power (t = 8.3 ms, TC = 83°C)
PG(AV)
0.75
W
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Mounting Torque
8.0
in. lb.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
8 AMPERES RMS
100 thru 600 VOLTS
K
G
A
TO−220AB
CASE 221A−07
STYLE 3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed marking, ordering, and shipping information in
the package dimensions section on page 4 of this data sheet.
MARKING AND ORDERING INFORMATION
TO−220AB
CASE 221A−09
STYLE 3
1
2
3
1
2
3


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