BUK7510-30 datasheet(4/8 Pages) PHILIPS

Part #	BUK7510-30

Description	TrenchMOS transistor Standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK7510-30

Standard level FET

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

mb = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

0

20

40

60

80

100

120

140

160

180

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

1E-07

1E-05

1E-03

1E-01

1E+01

t / s

Zth / (K/W)

1E+01

1E+00

1E-01

1E-02

1E-03

0

0.5

0.2

0.1

0.05

0.02

BUKX514-55

D =

tp

T

P

t

D

0

20

40

60

80

100

120

140

160

180

Tmb / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

02

46

8

10

0

20

40

60

80

100

BUK7510-30

VDS / V

ID / A

4

4.5

5

5.5

6

6.5

8

12

10

VGS / V =

1

10

100

1

10

100

1000

7510-30

VDS / V

ID / A

RDS(ON)

= VDS

/ ID

DC

tp = 100 us

1 ms

10 ms

100 ms

0

2040

6080

100

0

7510-30

ID / A

RDS(ON) / mOhm

10

20

30

VGS / V =

12

10

8

6.5

6

5.5

December 1997

4

Rev 1.100

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