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MBR0520LT1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MBR0520LT1
Description  Surface Mount Schottky Power Rectifier Plastic SOD−123 Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MBR0520LT1 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MBR0520LT1, MBR0520LT3
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
V
Average Rectified Forward Current
(Rated VR, TL = 90°C)
IF(AV)
0.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
5.5
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−65 to +125
°C
Voltage Rate of Change (Rated VR)
dv/dt
1000
V/
ms
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance; Junction−to−Ambient (Note 1)
RqJA
206
°C/W
Thermal Resistance; Junction−to−Lead
RqJL
150
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
vF
TJ = 25°C
TJ = 100°C
V
(iF = 0.1 Amps)
(iF = 0.5 Amps)
0.300
0.385
0.220
0.330
Maximum Instantaneous Reverse Current (Note 2)
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 10 V)
(Rated DC Voltage = 20 V)
75
mA
250
mA
5 mA
8 mA
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2%.


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