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BUB323Z Datasheet(PDF) 3 Page - ON Semiconductor

Part No. BUB323Z
Description  NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BUB323Z Datasheet(HTML) 3 Page - ON Semiconductor

   
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BUB323Z
http://onsemi.com
3
Figure 1. IC = f(VCE) Curve Shape
IC
INOM = 6.5 A
Output transistor turns on: IC = 40 mA
High Voltage Circuit turns on: IC = 20 mA
Avalanche diode turns on: IC = 100 mA
Icer Leakage Current
250 V
300 V
340 V
VCE
VCLAMP NOMINAL
= 400 V
By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the IC = f(VCE) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.
Figure 2. Basic Energy Test Circuit
MERCURY CONTACTS
WETTED RELAY
VCE
MONITOR
(VGATE)
L INDUCTANCE
(8 mH)
IB CURRENT
SOURCE
VBEoff
IB2 SOURCE
IC CURRENT
SOURCE
0.1
W
NON
INDUCTIVE
IC
MONITOR
RBE = 100 W
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100 W, Vgate = 280 V, L = 8.0 mH
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
340V
100
10
0.001
0.01
0.1
1
10
TC = 25°C
250 ms
10ms
1ms
300
ms
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO


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