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BUB323Z Datasheet(PDF) 2 Page - ON Semiconductor

Part No. BUB323Z
Description  NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BUB323Z Datasheet(HTML) 2 Page - ON Semiconductor

   
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BUB323Z
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Clamping Voltage (IC = 7.0 A)
(TC = − 40°C to +125°C)
VCLAMP
350
450
Vdc
Collector−Emitter Cutoff Current
(VCE = 200 V, IB = 0)
ICEO
100
mAdc
Emitter−Base Leakage Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
50
mAdc
ON CHARACTERISTICS (Note 1)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)
VBE(sat)
2.2
2.5
Vdc
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 70 mAdc)
(TC = 125°C)
(IC = 8.0 Adc, IB = 0.1 Adc)
(TC = 125°C)
(IC = 10 Adc, IB = 0.25 Adc)
VCE(sat)
1.6
1.8
1.8
2.1
1.7
Vdc
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(TC = − 40°C to +125°C)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.1
1.3
2.1
2.3
Vdc
Diode Forward Voltage Drop
(IF = 10 Adc)
VF
2.5
Vdc
DC Current Gain
(IC = 6.5 Adc, VCE = 1.5 Vdc)
(TC = − 40°C to +125°C)
(IC = 5.0 Adc, VCE = 4.6 Vdc)
hFE
150
500
3400
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
200
pF
Input Capacitance
(VEB = 6.0 V)
Cib
550
pF
CLAMPING ENERGY (See Notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)
WCLAMP
200
mJ
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
(IC = 6.5 A, IB1 = 45 mA,
VBE(off) = 0, RBE(off) = 0,
VCC = 14 V, VZ = 300 V)
tfi
625
ns
Storage Time
tsi
10
30
ms
Cross−over Time
tc
1.7
ms
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle = 2.0%.


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