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HGTG30N60B3D Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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HGTG30N60B3D Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3D UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 60 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 30 A Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG) 25 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 220 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150 oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 208 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125 oC, R G = 3Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25 oC - - 250 µA TC = 150 oC- - 3 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V TC = 25 oC - 1.45 1.9 V TC = 150 oC- 1.7 2.1 V Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 4.2 5 6 V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Switching SOA SSOA TJ = 150 oC, R G = 3Ω, VGE = 15V, L = 100µH VCE (PK) = 480V 200 - - A VCE (PK) = 600V 60 - - A Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -7.2 - V On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 170 190 nC VGE = 20V - 230 250 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25 oC, ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG = 3Ω, L = 1mH, Test Circuit (Figure 19) -36 - ns Current Rise Time trI -25 - ns Current Turn-Off Delay Time td(OFF)I - 137 - ns Current Fall Time tfI -58 - ns Turn-On Energy EON - 550 800 µJ Turn-Off Energy (Note 3) EOFF - 680 900 µJ HGTG30N60B3D |
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