HGTG30N60B3D datasheet(2/8 Pages) FAIRCHILD

Part #	HGTG30N60B3D

Description	60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTG30N60B3D Rev. B2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG30N60B3D

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

600

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

60

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

30

A

Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG)

25

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

220

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

60A at 600V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

208

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67

W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

260

oC

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

4

µs

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

10

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 360V, TJ = 125

oC, R

G = 3Ω.

Electrical Specifications

TC = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

600

-

V

Collector to Emitter Leakage Current

ICES

VCE = BVCES

TC = 25

oC

-

250

µA

TC = 150

oC-

-

3

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = IC110,

VGE = 15V

TC = 25

oC

-

1.45

1.9

V

TC = 150

oC-

1.7

2.1

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 250µA, VCE = VGE

4.2

5

6

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 3Ω,

VGE = 15V, L = 100µH

VCE (PK) = 480V

200

-

A

VCE (PK) = 600V

60

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = IC110, VCE = 0.5 BVCES

-7.2

-

V

On-State Gate Charge

QG(ON)

IC = IC110,

VCE = 0.5 BVCES

VGE = 15V

-

170

190

nC

VGE = 20V

-

230

250

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

oC,

ICE = IC110,

VCE = 0.8 BVCES,

VGE = 15V,

RG = 3Ω,

L = 1mH,

Test Circuit (Figure 19)

-36

-

ns

Current Rise Time

trI

-25

-

ns

Current Turn-Off Delay Time

td(OFF)I

-

137

-

ns

Current Fall Time

tfI

-58

-

ns

Turn-On Energy

EON

-

550

800

µJ

Turn-Off Energy (Note 3)

EOFF

-

680

900

µJ

HGTG30N60B3D

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