EMC4DXV5T5G datasheet(8/11 Pages) ONSEMI

Part #	EMC4DXV5T5G

Description	Dual Common Base?묬ollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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Manufacturer	ONSEMI [ON Semiconductor]

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EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

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TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR

10

1

0.1

010

20

30

40

50

100

10

1

0

246

8

10

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

2

4

6

8 1015 2025 3035 4045 50

VR, REVERSE BIAS VOLTAGE (V)

Figure 22. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

0

204060

80

Figure 23. DC Current Gain

1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 24. Output Capacitance

Figure 25. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (V)

Figure 26. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

0.01

0.001

−25°C

25°C

TA =75°C

VCE = 10 V

180

160

140

120

100

80

60

40

20

0

2

4 6

8

15 20 40 50 60 70 80 90

f = 1 MHz

lE = 0 V

TA = 25°C

LOAD

+12 V

Figure 27. Inexpensive, Unregulated Current Source

Typical Application

for PNP BRTs

25°C

IC/IB = 10

TA =−25°C

TA =75°C

25°C

−25°C

VO = 5 V

VO = 0.2 V

25°C

TA =−25°C

75°C

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EMC4DXV5T5G Datasheet(PDF) 8 Page - ON Semiconductor

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