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HN1B01FDW1T1 Datasheet(PDF) 3 Page - ON Semiconductor |
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HN1B01FDW1T1 Datasheet(HTML) 3 Page - ON Semiconductor |
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HN1B01FDW1T1 http://onsemi.com 3 Typical Electrical Characteristics: PNP Transistor Figure 1. Collector Saturation Region 0−1 −2 −3 −4 −6 −5 −200 0 −40 VCE, COLLECTOR−EMITTER VOLTAGE (V) −80 −120 −160 Figure 2. DC Current Gain −1 −10 −100 −1000 1000 10 IC, COLLECTOR CURRENT (mA) 100 TA = 25°C −2.0 mA −1.5 mA −1.0 mA −0.5 mA IB = −0.2 mA VCE = −1.0 V TA = 100°C −25 °C 25 °C Figure 3. DC Current Gain −1 −10 −1000 −100 1000 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. VCE(sat) versus IC −1 −10 −100 −1000 −1 −0.01 IC, COLLECTOR CURRENT (mA) −0.1 IC/IB = 10 TA = 100°C −25 °C 25 °C TA = 100°C −25 °C 25 °C Figure 5. VBE(sat) versus IC −1 −10 −1000 −100 −10 −0.1 IC, COLLECTOR CURRENT (mA) −1 Figure 6. Base−Emitter Voltage 0 −0.1 −10,000 VBE, BASE−EMITTER VOLTAGE (V) −0.1 COMMON EMITTER VCE = 6 V TA = 100°C −25 °C 25 °C TA = 25°C IC/IB = 10 −1 −10 −100 −1000 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1 VCE = −6.0 V |
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