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HN1B01FDW1T1 Datasheet(PDF) 1 Page - ON Semiconductor |
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HN1B01FDW1T1 Datasheet(HTML) 1 Page - ON Semiconductor |
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© Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 2 Publication Order Number: HN1B01FDW1T1/D HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: V CEO = 50 V, IC = 200 mA • High h FE: hFE = 200 X400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc Collector Current − Continuous IC 200 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 380 mW Junction Temperature TJ 150 °C Storage Temperature Tstg − 55 to +150 °C MARKING DIAGRAM http://onsemi.com Q1 (4) (5) (6) (1) (2) (3) Q2 SC−74 CASE 318F STYLE 3 1 2 3 R9 M R9 = Device Code M = Date Code 6 5 4 Device Package Shipping† ORDERING INFORMATION HN1B01FDW1T1 SC−74 3000/Tape & Reel HN1B01FDW1T1G SC−74 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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