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HN1B01FDW1T1 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. HN1B01FDW1T1
Description  Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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HN1B01FDW1T1 Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
Publication Order Number:
HN1B01FDW1T1/D
HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
High Voltage and High Current: V
CEO = 50 V, IC = 200 mA
High h
FE: hFE = 200
X400
Moisture Sensitivity Level: 1
ESD Rating
− Human Body Model: 3A
− Machine Model: C
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
200
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
380
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
− 55 to +150
°C
MARKING DIAGRAM
http://onsemi.com
Q1
(4)
(5)
(6)
(1)
(2)
(3)
Q2
SC−74
CASE 318F
STYLE 3
1
2
3
R9 M
R9
= Device Code
M
= Date Code
6
5
4
Device
Package
Shipping
ORDERING INFORMATION
HN1B01FDW1T1
SC−74
3000/Tape & Reel
HN1B01FDW1T1G
SC−74
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.


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