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EMA6DXV5T1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. EMA6DXV5T1
Description  Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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EMA6DXV5T1 Datasheet(HTML) 2 Page - ON Semiconductor

   
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EMA6DXV5T1, EMA6DXV5T5
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.2
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
160
350
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
32.9
47
61.1
k
W
3. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (5°C)
RqJA= 370°C/W
250
300


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