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BAW56LT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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BAW56LT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BAW56LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (I(BR) = 100 mA) V(BR) 70 − V Reverse Voltage Leakage Current (VR = 25 V, TJ = 150°C) (VR = 70 V) (VR = 70 V, TJ = 150°C) IR − − − 30 2.5 50 mA Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 2.0 pF Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF − − − − 715 855 1000 1250 mV Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) RL = 100 W trr − 6.0 ns Notes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2.0 k 820 W 0.1 mF D.U.T. VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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